(Hong Kong)
Product Summary
The 2SC3133 is a silicon NPN epitaxial planar type transistor specifically designed for RF power amplifiers in HF band mobile radio applications. The 2SC3133 is used for 10 watts output power amplifiers in HF band SSB mobile radio applications.
Parametrics
2SC3133 absolute maximum ratings: (1)VCBO collector to base voltage: 60V; (2)VEBO emitter to base voltage: 5V; (3)VCEO collector to emitter voltage: 25V; (4)IC collector current: 6A; (5)PC collector dissipation: 1.5W; (6)Tj junction temperature: 150℃; (7)Tstg storage temperature: -55 to 150℃.
Features
2SC3133 features: (1)High power gain: Po≧60W, Gpe≧14dB@f=27MHz, VCC=12V, Po=13W; (2)Emitter ballasted construction for high reliability and good performances; (3)High ruggedness: the ability withstand infinite VSWR when operated at VCC=16V, Po=16W, f=27MHz; (4)intermodulation distortion: IMD≦ -25dB @f=27MHz, VCC=12V, Po=13W(PEP); (5)Input/output impedance: Zin=1.8-j2.5Ω, Zout=7.0-j3.5Ω@f=27MHz, VCC=12V, Po=13W.
Diagrams
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 2SC3133 |
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Data Sheet |
Negotiable |
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2SC3000 |
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2SC3011 |
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2SC3012 |
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2SC3025 |
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Negotiable |
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Other |
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Negotiable |
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2SC3038 |
Other |
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Negotiable |
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