(Hong Kong)
Product Summary
The MRF317 is a NPN silicon RF power transistor. It is designed primarily for wideband large–signal output amplifier stages in 30–200 MHz frequency range.
Parametrics
MRF317 absolute maximum ratings: (1)Collector–Emitter Voltage VCEO: 35 Vdc; (2)Collector–Base Voltage VCBO: 65 Vdc; (3)Emitter–Base Voltage VEBO: 4.0 Vdc; (4)Collector Current — Continuous IC: 12Adc; Collector Current — Peak (10 seconds) IC: 18Adc; (5)Total Device Dissipation @ TC = 25℃ PD: 270W; Derate above 25℃ PD: 1.54W/℃; (6)Storage Temperature Range Tstg: –65 to +150 ℃.
Features
MRF317 features: (1)Guaranteed Performance at 150 MHz, 28 Vdc; Output Power = 100 W; Minimum Gain = 9.0 dB; (2)Built-in Matching Network for Broadband Operation; (3)100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR; (4)Gold Metallization System for High Reliability; (5)High Output Saturation Power-Ideally Suited for 30 W Carrier/120 W Peak AM Amplifier Service; (6)Guaranteed Performance in Broadband Test Fixture.
Diagrams
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 MRF317 |
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