(Hong Kong)
Product Summary
The STD25NF10LT4 is a N-channel 100V, 0.030Ω, 25A, DPAK low gate charge power MOSFET. This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. The STD25NF10LT4 is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.
Parametrics
STD25NF10LT4 absolute maximum ratings: (1)VDS Drain-source voltage (VGS = 0): 100 V; (2)VDGR Drain-gate voltage (RGS = 20 kΩ): 100 V; (3)VGS Gate- source voltage: ± 16 V; (4)ID Drain current (continuous) at TC = 25℃: 25 A; (5)ID Drain current (continuous) at TC = 100℃: 21 A; (6)IDM Drain current (pulsed): 100 A; (7)Ptot Total dissipation at TC = 25℃: 100 W; (8)Derating Factor: 0.67 W/℃; (9)Peak diode recovery avalanche energy: 20 V/ns EAS; (10)Single pulse avalanche energy: 450 mJ; (11)Tstg Storage temperature: -55 to 175 ℃; (12)Tj Max. operating junction temperature: -55 to 175 ℃.
Features
STD25NF10LT4 features: (1)Exceptional dv/dt capability; (2)100% avalanche tested; (3)Low threshold device; (4)Logic level device.
Diagrams
| Image | Part No | Mfg | Description |  |
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 STD25NF10LT4 |
STMicroelectronics |
MOSFET N-Ch 100 Volt 25 Amp |
Data Sheet |
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