(Hong Kong)
Product Summary
The IRFP254N is a 125mohm power MOSFET. Fifth Generation HEXFET IRFP254N from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design of the IRFP254N that HEXFET Power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Parametrics
IRFP254N absolute maximum ratings: (1)VGS Gate-to-Source Voltage: ± 20 V; (2)EAS Single Pulse Avalanche Energy: 300 mJ; (3)IAR Avalanche Current: 14 A; (4)EAR Repetitive Avalanche Energy: 22 mJ; (5)dv/dt Peak Diode Recovery dv/dt: 7.4 V/ns; (6)Operating Junction and Storage Temperature Range: -55 to + 175℃.
Features
IRFP254N features: (1)Advanced Process Technology; (2)Dynamic dv/dt Rating; (3)175℃ Operating Temperature; (4)Fast Switching; (5)Fully Avalanche Rated; (6)Ease of Paralleling; (7)Simple Drive Requirements.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 IRFP254N |
Vishay/Siliconix |
MOSFET N-Chan 250V 23 Amp |
Data Sheet |
Negotiable |
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IRFP254N, SiHFP254N |
Other |
|
Data Sheet |
Negotiable |
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IRFP254NPBF |
Vishay/Siliconix |
MOSFET N-Chan 250V 23 Amp |
Data Sheet |
Negotiable |
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