MJD45H11G

TO-251, complementary power transistor, 8 amperes, 80 volts, 20 watts, Pb-Free, PNP

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Price:: US $0.11~0.19 / piece [Get Latest Price]

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	US $0.11~0.19

PartNumber:: MJD45H11G

Brand:: ON Semiconductor - ON | Pack: TO | D/C: 10+

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Products Upload time: 2011-09-22

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Part Number:MJD45H11G
US $0.11 - 0.19
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Product Summary

The MJD45H11G is a complementary power transistor. It is designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers.

Parametrics

MJD45H11G maximum ratings: (1)Collector-Emitter Voltage, VCEO: 80 Vdc; (2)Emitter-Base Voltage, VEB: 5 Vdc; (3)Collector Current: Continuous, IC: 8Adc; Peak, IC: 16 Adc; (4)Total Power Dissipation @ TC = 25℃: PD: 20 W; Derate above 25℃: 0.16W/℃; (5)Total Power Dissipation* @ TA = 25℃: PD: 1.75 W; Derate above 25℃: 0.014 W/℃; (6)Operating and Storage Junction Temperature Range, TJ, Tstg: -55 to +150℃.

Features

MJD45H11G features: (1)Pb-Free Packages are Available; (2)Lead Formed for Surface Mount Application in Plastic Sleeves(No Suffix); (3)Straight Lead Version in Plastic Sleeves (“-1” Suffix); (4)Lead Formed Version in 16 mm Tape and Reel for Surface Mount(“T4” Suffix); (5)Electrically Similar to Popular D44H/D45H Series; (6)Low Collector Emitter Saturation Voltage -VCE(sat) = 1.0 Volt Max @ 8.0 Amperes; (7)Fast Switching Speeds; (8)Complementary Pairs Simplifies Designs; (9)Epoxy Meets UL 94, V-0 @ 0.125 in; (10)ESD Ratings: Human Body Model, 3B > 8000 V; Machine Model, C > 400 V.