(Hong Kong)
Product Summary
The SGH15N60RUFD is an Insulated Gate Bipolar Transistor. It provides low conduction and switching losses as well as short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature. The applications of the SGH15N60RUFD include: AC & DC motor controls, general purpose inverters, robotics, and servo controls.
Parametrics
SGH15N60RUFD absolute maximum ratings: (1)VCES Collector-Emitter Voltage: 600 V; (2)VGES Gate-Emitter Voltage: ±20 V; (3)IC Collector Current @ TC = 25℃: 24 A; Collector Current @ TC = 100℃: 15 A; (4)ICM Pulsed Collector Current: 45 A; (5)IF Diode Continuous Forward Current @ TC = 100℃: 15 A; (6)IFM Diode Maximum Forward Current: 160 A; (7)TSC Short Circuit Withstand Time @ TC = 100℃: 10 μs; (8)PD Maximum Power Dissipation @ TC = 25℃: 160 W; Maximum Power Dissipation @ TC = 100℃: 64 W; (9)TJ Operating Junction Temperature: -55 to +150 ℃; (10)Tstg Storage Temperature Range: -55 to +150 ℃; (11)TL Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds: 300 ℃.
Features
SGH15N60RUFD features: (1)Short circuit rated 10μs @ TC = 100℃, VGE = 15V; (2)High speed switching; (3)Low saturation voltage: VCE(sat) = 2.2 V @ IC = 15A; (4)High input impedance; (5)CO-PAK, IGBT with FRD: trr = 42ns (typ.).
Diagrams
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 SGH15N60RUFD |
Other |
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Data Sheet |
Negotiable |
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SGH15N60RUFDTU |
Fairchild Semiconductor |
IGBT Transistors Dis Short Circuit Rated IGBT |
Data Sheet |
Negotiable |
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