(Hong Kong)
Product Summary
The 2SB1212 is a high power version of TO-92. MRT is a 1.2W package power taped transistor designed for use with an automatic placement machine.
Parametrics
2SB1212 absolute maximum ratings: (1)Maximum collector power dissipation (Pc): 900mW; (2)Maximum collector-base voltage (Ucb): 160V; (3)Maximum collector-emitter voltage (Uce): 140V; (4)Maximum emitter-base voltage (Ueb): 12V; (5)Maximum collector current (Ic max): 1.5A; (6)Maximum junction temperature (Tj): 165℃; (7)Forward current transfer ratio (hFE), min/max: 200T; (8)Manufacturer of 2SB1212 transistor: NEC; (9)Package of 2SB1212 transistor: TO92; (10)Application of 2SB1212 transistor: RF, Medium Power, High Voltage.
Features
2SB1212 features: (1)Low noise; (2)Low VCE(sat); (3)High hFE; (4)High voltage SW; (5)Medium Power.
Diagrams
 |
 2SB1000 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
2SB1000A |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
2SB1001 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
2SB1002 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
2SB1005 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
2SB1007 |
Other |
|
Data Sheet |
Negotiable |
|
||||
