Product Summary

The 2SB1212 is a high power version of TO-92. MRT is a 1.2W package power taped transistor designed for use with an automatic placement machine.

Parametrics

2SB1212 absolute maximum ratings: (1)Maximum collector power dissipation (Pc): 900mW; (2)Maximum collector-base voltage (Ucb): 160V; (3)Maximum collector-emitter voltage (Uce): 140V; (4)Maximum emitter-base voltage (Ueb): 12V; (5)Maximum collector current (Ic max): 1.5A; (6)Maximum junction temperature (Tj): 165℃; (7)Forward current transfer ratio (hFE), min/max: 200T; (8)Manufacturer of 2SB1212 transistor: NEC; (9)Package of 2SB1212 transistor: TO92; (10)Application of 2SB1212 transistor: RF, Medium Power, High Voltage.

Features

2SB1212 features: (1)Low noise; (2)Low VCE(sat); (3)High hFE; (4)High voltage SW; (5)Medium Power.

Diagrams

2SB1212 darlington transistor internal circuit

2SB1000
2SB1000
Other

Data Sheet
Negotiable 
2SB1000A
2SB1000A
Other

Data Sheet
Negotiable 
2SB1001
2SB1001
Other

Data Sheet
Negotiable 
2SB1011
2SB1011

TRANS PNP LF 400VCEO .1A TO-126
Data Sheet
0-1: $0.46
1-25: $0.36
25-100: $0.31
100-250: $0.27
250-500: $0.23
500-1000: $0.19
1000-2500: $0.17
2SB1037
2SB1037
Other

Data Sheet
Negotiable 
2SB10540P
2SB10540P

TRANS PNP 100VCEO 5A TOP-3F
Data Sheet
Negotiable