(Hong Kong)
Product Summary
The 2SJ350 is a Silicon P Channel MOS FET. It is used for high speed power switching.
Parametrics
2SJ350 absolute maximum ratings: (1)Drain to source voltage VDSS: -120 V; (2)Gate to source voltage VGSS: ±20 V; (3)Drain current ID: -6 A; (4)Drain peak current ID(pulse): -12 A; (5)Body to drain diode reverse drain current IDR: -6 A; (6)Channel dissipation Pch: 20 W; (7)Channel temperature Tch: 150 ℃; (8)Storage temperature Tstg: –55 to +150 ℃.
Features
2SJ350 features: (1)Low on-resistance; (2)High speed switching; (3)Low drive current; (4)4 V gate drive device can be driven from 5 V source; (5)Suitable for switching regulator, DC-DC converter.
Diagrams
| Image | Part No | Mfg | Description |  |
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 2SJ350 |
Other |
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Data Sheet |
Negotiable |
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2SJ302 |
Other |
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Data Sheet |
Negotiable |
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2SJ303 |
Other |
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Data Sheet |
Negotiable |
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2SJ304(F) |
Toshiba |
MOSFET MOSFET P-Ch 60V 14A Rdson 0.12 Ohm |
Data Sheet |
Negotiable |
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2SJ304F |
Other |
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Data Sheet |
Negotiable |
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2SJ305 |
Other |
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Data Sheet |
Negotiable |
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2SJ305KN |
Other |
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Data Sheet |
Negotiable |
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