(Hong Kong)
Product Summary
The 2SK1306 is a Silicon N Channel MOS FET. It is used for high speed power switching.
Parametrics
2SK1306 absolute maximum ratings: (1)Drain to source voltage VDSS: 100 V; (2)Gate to source voltage VGSS: ±20 V; (3)Drain current ID: 15 A; (4)Drain peak current ID(pulse): 60 A; (5)Body to drain diode reverse drain current IDR: 15 A; (6)Channel dissipation Pch: 30 W; (7)Channel temperature Tch: 150 ℃; (8)Storage temperature Tstg: –55 to +150 ℃.
Features
2SK1306 features: (1)Low on-resistance; (2)High speed switching; (3)Low drive current; (4)4 V gate drive device: Can be driven from 5 V source; (5)Suitable for motor drive, DC-DC converter, power switch and solenoid drive.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 2SK1306 |
Other |
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Data Sheet |
Negotiable |
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2SK1056 |
Other |
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Data Sheet |
Negotiable |
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2SK1057 |
Other |
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Data Sheet |
Negotiable |
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2SK1058 |
Other |
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Data Sheet |
Negotiable |
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2SK1058-E |
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MOSFET N-CH 160V 7A TO-3P |
Data Sheet |
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2SK1061 |
Other |
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Data Sheet |
Negotiable |
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2SK1062 |
Other |
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Data Sheet |
Negotiable |
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