(Hong Kong)
Product Summary
The 2SK2202 is a silicon N-Channel MOS FET. It is used for high speed power switching.
Parametrics
2SK2202 absolute maximum ratings: (1)Drain to source voltage VDSS: 120 V; (2)Gate to source voltage VGSS: ±20 V; (3)Drain current ID: 7 A; (4)Drain peak current ID(pulse): 14 A; (5)Body to drain diode reverse drain current IDR: 7 A; (6)Channel dissipation Pch: 20 W; (7)Channel temperature Tch: 150 ℃; (8)Storage temperature Tstg: –55 to +150 ℃.
Features
2SK2202 features: (1)Low on-resistance; (2)High speed switching; (3)Low drive current; (4)4 V gate drive device can be driven from 5 V source; (5)Suitable for Switching regulator, DC-DC converter.
Diagrams
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 2SK2202 |
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Data Sheet |
Negotiable |
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2SK2002-01MR |
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2SK2003-01MR |
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2SK2007 |
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Negotiable |
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2SK2008 |
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Negotiable |
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2SK2009 |
Other |
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Negotiable |
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2SK2010 |
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Negotiable |
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