Product Summary
The BDX54C is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. It is intented for use in hammer drivers, audio amplifiers and other medium power linear and switching applications. The applications of the BDX54C include: (1)audio amplifiers; (2)linearand switching industrial equipment.
Parametrics
BDX54C absolute maximum ratings: (1)VCBO Collector-Base Voltage (IE = 0): 100 V; (2)VCEO Collector-Emitter Voltage (IB = 0): 100 V; (3)VEBO Emitter-base Voltage (IC = 0): 5 V; (4)IC Collector Current: 8 A; (5)ICM Collector Peak Current (repetitive): 12 A; (6)IB Base Current: 0.2 A; (7)Ptot Total Dissipation at Tc ≤ 25 ℃: 60 W; (8)Ts tg Storage Temperature: -65 to 150 ℃; (9)Tj Max. Operating Junction Temperature: 150 ℃.
Features
BDX54C features: ST Microelectronics preferred salestypes.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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BDX54C |
Fairchild Semiconductor |
Transistors Darlington PNP Darlington 8A 100V |
Data Sheet |
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BDX54C-S |
Bourns |
Transistors Darlington 100V 8A PNP |
Data Sheet |
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BDX54CTU |
Fairchild Semiconductor |
Transistors Darlington PNP Darlington 8A 100V |
Data Sheet |
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BDX54CG |
ON Semiconductor |
Transistors Darlington 8A 100V Bipolar Power PNP |
Data Sheet |
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