Product Summary

The IXFK180N15P is a N-channel enhancement mode fast intrinsic diode avalanche rated.

Parametrics

IXFK180N15P absolute maximum ratings: (1)VDSS when TJ = 25℃ to 175℃: 150 V; (2)VDGR when TJ = 25℃ to 175℃; RGS = 1 MΩ 150 V; (3)VDS Continuous ±20 V; (4)VGSM Transient ±30 V; (5)ID25 when TC = 25℃ 180 A; (6)ID(RMS) External lead current limit 75 A; (7)IDM when TC = 25℃, pulse width limited by TJM 380 A; (8)IAR when TC = 25℃ 60 A; (9)EAR when TC = 25℃ 100 mJ; (10)EAS when TC = 25℃ 4 J; (11)dv/dt when IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS 10 V/ns.

Features

IXFK180N15P features: (1)Internationastandard packages; (2)Unclamped Inductive Switching (UIS) rated; (3)Low package inductance, easy to drive and to protect.

Diagrams

IXFK180N15P simplified circuit

Image Part No Mfg Description Data Sheet Download Pricing
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IXFK180N15P
IXFK180N15P

Ixys

MOSFET 180 Amps 150V 0.011 Rds

Data Sheet

Negotiable 
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IXFK 120N25

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Data Sheet

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