(Hong Kong)
Product Summary
The IXFK180N15P is a N-channel enhancement mode fast intrinsic diode avalanche rated.
Parametrics
IXFK180N15P absolute maximum ratings: (1)VDSS when TJ = 25℃ to 175℃: 150 V; (2)VDGR when TJ = 25℃ to 175℃; RGS = 1 MΩ 150 V; (3)VDS Continuous ±20 V; (4)VGSM Transient ±30 V; (5)ID25 when TC = 25℃ 180 A; (6)ID(RMS) External lead current limit 75 A; (7)IDM when TC = 25℃, pulse width limited by TJM 380 A; (8)IAR when TC = 25℃ 60 A; (9)EAR when TC = 25℃ 100 mJ; (10)EAS when TC = 25℃ 4 J; (11)dv/dt when IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS 10 V/ns.
Features
IXFK180N15P features: (1)Internationastandard packages; (2)Unclamped Inductive Switching (UIS) rated; (3)Low package inductance, easy to drive and to protect.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 IXFK180N15P |
Ixys |
MOSFET 180 Amps 150V 0.011 Rds |
Data Sheet |
Negotiable |
|
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
 |
IXFK 120N25 |
Other |
|
Data Sheet |
Negotiable |
|
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|
IXFK100N10 |
Ixys |
MOSFET 100 Amps 100V 0.012 Ohm Rds |
Data Sheet |
Negotiable |
|
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|
IXFK100N25 |
Ixys |
MOSFET 100 Amps 250V 0.027 Rds |
Data Sheet |
Negotiable |
|
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|
IXFK110N07 |
Ixys |
MOSFET 70V 110A |
Data Sheet |
Negotiable |
|
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|
IXFK140N30P |
Ixys |
MOSFET 140 Amps 300V 0.024 Ohms Rds |
Data Sheet |
Negotiable |
|
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|
IXFK180N10 |
Ixys |
MOSFET 100V 180A |
Data Sheet |
Negotiable |
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