(Hong Kong)
Product Summary
The BSM25GP120 is an IGBT-Module.
Parametrics
BSM25GP120 absolute maximum ratings for diode rectifier:(1)repetitive peak reverse voltage, VRRM: 1600V; (2)RMS forward current per chip, IFRMSM: 40A; (3)DC forward current, at the condition of TC = 80℃, Id: 25A; (4)surge forward current, at the condition of tP = 10 ms, Tvj = 25℃, IFSM: 300A; (5)surge forward current, at the condition of tP = 10 ms, Tvj = 150℃, IFSM: 230A; (6)I2t - value, at the condition of tP = 10 ms, Tvj = 25℃, I2t: 450A2s; (7)I2t - value, at the condition of tP = 10 ms, Tvj = 150℃, I2t: 260A2s.
Features
BSM25GP120 characteristic values for diode rectifier: (1)forward voltage at Tvj = 150℃, IF = 25 A, VF: 1,05 v typ, 1,1 V max; (2)threshold voltage at Tvj = 150℃, V(TO): 0,8 V max; (3)slope resistance at Tvj = 150℃, rT: 10,5 mΩ max; (4)reverse current at Tvj = 150℃, VR = 1600V, IR: 2 mA typ; (5)lead resistance, terminals-chip at TC = 25℃, RAA+CC: 8 mΩ typ.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 BSM25GP120 |
Infineon Technologies |
IGBT Modules 1200V 25A PIM |
Data Sheet |
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BSM25GP120_B2 |
Infineon Technologies |
IGBT Modules IGBT 1600V 25A |
Data Sheet |
Negotiable |
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