Product Summary

The IRL3103SPBF Advanced HEXFET Power MOSFET from International Rectifier utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that IRL3103SPBF is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Parametrics

IRL3103SPBF absolute maximum ratings: (1)ID @ TC = 25℃, Continuous Drain Current, VGS @ 10V: 64 A; (2)ID @ TC = 100℃, Continuous Drain Current, VGS @ 10V: 45 A; (3)IDM Pulsed Drain Current: 220 A; (4)PD @TC = 25℃, Power Dissipation: 94 W; (5)Linear Derating Factor: 0.63 W/℃; (6)VGS Gate-to-Source Voltage: ±16 V; (7)IAR Avalanche Current: 34 A; (8)EAR Repetitive Avalanche Energy: 22 mJ; (9)dv/dt Peak Diode Recovery dv/dt: 5.0 V/ns; (10)Tj Tstg Operating Junction and Storage Temperature Range: -55 to + 175 ℃; (11)Soldering Temperature, for 10 seconds: 300 (1.6mm from case ); (12)Mounting torque, 6-32 or M3 srew: 10 lbf·in (1.1N·m).

Features

IRL3103SPBF features: (1)Advanced Process Technology; (2)Surface Mount; (3)Low-profile through-hole; (4)175℃ Operating Temperature; (5)Fast Switching; (6)Fully Avalanche Rated; (7)Lead-free.

Diagrams

IRL3103SPBF diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRL3103SPBF
IRL3103SPBF
International Rectifier
MOSFET
Data Sheet
0-2000: $0.55
2000-3000: $0.55
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRL3102
IRL3102

MOSFET N-CH 20V 61A TO-220AB
Data Sheet
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IRL3102L
IRL3102L

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Data Sheet
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IRL3102PBF
IRL3102PBF
International Rectifier
MOSFET
Data Sheet
0-2140: $0.58
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IRL3102S

MOSFET N-CH 20V 61A D2PAK
Data Sheet
Negotiable 
IRL3102SPBF
IRL3102SPBF
International Rectifier
MOSFET
Data Sheet
0-2400: $0.48
IRL3102STRL
IRL3102STRL

MOSFET N-CH 20V 61A D2PAK
Data Sheet
Negotiable