(Hong Kong)
Product Summary
The ZTX300 is an NPN silicon planar small signal transistor.
Parametrics
ZTX300 absolute maxing ratings: (1)Collector-Base Voltage VCBO: 25 V; (2)Collector-Emitter Voltage VCEO: 25 V; (3)Emitter-Base Voltage VEBO: 5 V; (4)Continuous Collector Current IC: 500 mA; (5)Power Dissipation at Tamb=25℃ Ptot: 300 mW; (6)Operating and Storage Temperature Range Tj:Tstg: -55 to +175 ℃.
Features
ZTX300 electrical characteristics: (1)Collector-Base Breakdown Voltage V(BR)CBO: 25 V; (2)Collector-Emitter Sustaining Voltage VCEO(sus): 25 V; (3)Emitter-Base Breakdown Voltage V(BR)EBO: 5 V; (4)Collector Cut-Off Current ICBO: 0.2 μA; (5)Emitter Cut-Off Current IEBO: 0.2 μA; (6)Collector-Emitter Saturation Voltage VCE(sat): 0.35 V; (7)Base-Emitter Saturation Voltage VBE(sat): 0.65 to 1.0 V; (8)Static Forward Current Transfer Ratio hFE: 50 to 300; (9)Transition Frequency fT: 150 MHz; (10)Output Capacitance Cobo: 6 pF; (11)Noise Figure N: 7 dB.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 ZTX300 |
Diodes Inc. / Zetex |
Transistors Switching (Resistor Biased) - |
Data Sheet |
Negotiable |
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ZTX300STOA |
Diodes Inc. / Zetex |
Transistors Bipolar (BJT) - |
Data Sheet |
Negotiable |
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ZTX300STOB |
Diodes Inc. / Zetex |
Transistors Bipolar (BJT) - |
Data Sheet |
Negotiable |
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|
ZTX300STZ |
Diodes Inc. / Zetex |
Transistors Bipolar (BJT) - |
Data Sheet |
Negotiable |
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