(Hong Kong)
Product Summary
The 2SJ222 is a Silicon P-Channel MOS FET. It is used for high speed power switching.
Parametrics
2SJ222 absolute maximum ratings: (1)Drain to source voltage VDSS: –100 V; (2)Gate to source voltage VGSS: ±20 V; (3)Drain current ID: –20 A; (4)Drain peak current ID(pulse): –80 A; (5)Body to drain diode reverse drain current IDR: –20 A; (6)Channel dissipation Pch: 35 W; (7)Channel temperature Tch: 150 ℃; (8)Storage temperature Tstg: –55 to +150 ℃.
Features
2SJ222 features: (1)Low on-resistance; (2)High speed switching; (3)Low drive current; (4)4 V gate drive device can be driven from 5 V source; (5)Suitable for motor drive, DC-DC converter, power switch and solenoid drive.
Diagrams
| Image | Part No | Mfg | Description |  |
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 2SJ222 |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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2SJ218 |
Other |
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Data Sheet |
Negotiable |
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2SJ221 |
Other |
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Data Sheet |
Negotiable |
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2SJ222 |
Other |
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Data Sheet |
Negotiable |
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2SJ294 |
Other |
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Data Sheet |
Negotiable |
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2SJ288 |
Other |
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Data Sheet |
Negotiable |
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2SJ287 |
Other |
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Data Sheet |
Negotiable |
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