Product Summary

The APM2030N is a N-channel enhancement mode MOSFET. It is designed for Power Management in Computer, Portable Equipment and Battery Powered Systems.

Parametrics

APM2030N absolute maximum ratings: (1)VDSS Drain-Source Voltage: 20V; (2)VGSS Gate-Source Voltage: ±10V; (3)ID Maximum Drain Current – Continuous: 20A; (4)IDM Maximum Drain Current – Pulsed: 40A; (5)PD Maximum Power Dissipation: 50W at TA=25℃; 10W at TA=100℃ ; (6)TJ Maximum Junction Temperature: 150℃; (7)TSTG Storage Temperature Range: -55 to 150℃; (8)RθjA Thermal Resistance – Junction to Ambient: 50℃/W.

Features

APM2030N features: (1)20V/6A , RDS(ON)=35mΩ(typ.) @ VGS=4.5V, RDS(ON)=38mΩ(typ.) @ VGS=2.5V; (2)Super High Dense Cell Design for Extremely Low RDS(ON); (3)Reliable and Rugged; (4)TO-252 Package.

Diagrams

APM2030N diagram

Image Part No Mfg Description Data Sheet Download Pricing
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APM2030N
APM2030N

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Data Sheet

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APM2030N D
APM2030N D

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APM2030N V
APM2030N V

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APM2030ND
APM2030ND

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APM2030NU
APM2030NU

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Data Sheet

Negotiable