(Hong Kong)
Product Summary
The APM2030N is a N-channel enhancement mode MOSFET. It is designed for Power Management in Computer, Portable Equipment and Battery Powered Systems.
Parametrics
APM2030N absolute maximum ratings: (1)VDSS Drain-Source Voltage: 20V; (2)VGSS Gate-Source Voltage: ±10V; (3)ID Maximum Drain Current – Continuous: 20A; (4)IDM Maximum Drain Current – Pulsed: 40A; (5)PD Maximum Power Dissipation: 50W at TA=25℃; 10W at TA=100℃ ; (6)TJ Maximum Junction Temperature: 150℃; (7)TSTG Storage Temperature Range: -55 to 150℃; (8)RθjA Thermal Resistance – Junction to Ambient: 50℃/W.
Features
APM2030N features: (1)20V/6A , RDS(ON)=35mΩ(typ.) @ VGS=4.5V, RDS(ON)=38mΩ(typ.) @ VGS=2.5V; (2)Super High Dense Cell Design for Extremely Low RDS(ON); (3)Reliable and Rugged; (4)TO-252 Package.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 APM2030N |
Other |
|
Data Sheet |
Negotiable |
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APM2030N D |
Other |
|
Data Sheet |
Negotiable |
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APM2030N V |
Other |
|
Data Sheet |
Negotiable |
|
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APM2030ND |
Other |
|
Data Sheet |
Negotiable |
|
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|
APM2030NU |
Other |
|
Data Sheet |
Negotiable |
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