(Hong Kong)
Product Summary
The M54522P is an 8-unit 400ma darlington transistor array with clamp diode. The circuit of the M54522P is made of NPN transistors. Both the semiconductor integrated circuits of the M54522P perform high-current driving with extremely low input-current supply.
Parametrics
M54522P absolute maximum ratings: (1)Collector-emitter voltage VCEO: –0.5 ~ +40V; (2)Collector current IC: 400mA; (3)Input voltage VI: –0.5 ~ +40V; (4)Clamping diode forward current IF: 400mA; (5)Clamping diode reverse voltage VR: 40V; (6)Power dissipation Pd: 1.79(P)/1.10(FP)W; (7)Operating temperature Topr: –20 ~ +75℃; (8)Storage temperature Tstg: –55 ~ +125℃.
Features
M54522P features: (1)High breakdown voltage (BVCEO 3 40V); (2)High-current driving (Ic(max) = 400mA); (3)With clamping diodes; (4)Driving available with PMOS IC output; (5)Wide operating temperature range (Ta = –20 to +75℃).
Diagrams
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 M54522P |
Other |
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Data Sheet |
Negotiable |
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