(Hong Kong)
Product Summary
The HUF76639P3 is a 50A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET.
Parametrics
HUF76639P3 absolute maximum ratings: (1)Drain to Source Voltage VDSS: 100 V; (2)Drain to Gate Voltage (RGS = 20kΩ) VDGR: 100 V; (3)Gate to Source Voltage VGS: ±16 V; (4)Drain Current Continuous (TC = 25oC, VGS = 5V) ID: 50A; (5)Power Dissipation PD: 180W; Derate Above 25oC: 1.2W/oC; (6)Operating and Storage Temperature TJ, TSTG: -55 to 175 oC; (7)Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s TL: 300℃.
Features
HUF76639P3 features: (1)Ultra Low On-Resistance: rDS(ON) = 0.026Ω VGS = 10V; rDS(ON) = 0.027Ω VGS = 5V; (2)Simulation Models: Temperature Compensated PSPICE and SABE Electrical Models; Spice and SABER Thermal Impedance Models; (3)Peak Current vs Pulse Width Curve; (4)UIS Rating Curve; (5)Switching Time vs RGS Curves.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
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 |
 HUF76639P3 |
Fairchild Semiconductor |
MOSFET 50a 100V 0.027 Ohm Logic Level N-Ch |
Data Sheet |
Negotiable |
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HUF76639P3_Q |
Fairchild Semiconductor |
MOSFET 50a 100V 0.027 Ohm Logic Level N-Ch |
Data Sheet |
Negotiable |
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